128GB flash memory in 2009.
Samsung late Monday announced that it had produced the world’s first working NAND flash memory based on a 30-nanometer manufacturing process, promising a greatly increased storage density over today’s chips. The smaller manufacturing technique was made workable through a new technology known as self-aligned double patterning. By stepping up the use of lithography, the company is able to write both a coarser, more conventional pattern of memory cells as well as a finer pattern that fills the gaps; this makes the best use of the available space, Samsung says.
In a high capacity, multi-level cell (MLC) flash design, the improvement should allow for 64-gigabit chips that can combine to produce a 128GB memory unit; this would hold as much as 32,000 songs or 80 full-length movies at DVD quality, according to the company.
The iPods in 2010 are going to be insane.